Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
AssigneeASM America, Inc.
InventorsRobert B. Milligan, Doug Li, Steven Marcus
Life of this patent
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Abstract
Methods of forming a conductive metal layer over a dielectric layer using plasma enhanced atomic layer deposition (PEALD) are provided, along with related compositions and structures. A plasma barrier layer is deposited over the dielectric layer by a non-plasma atomic layer deposition (ALD) process prior to depositing the conductive layer by PEALD. The plasma barrier layer reduces or prevents deleterious effects of the plasma reactant in the PEALD process on the dielectric layer and can enhance adhesion. The same metal reactant can be used in both the non-plasma ALD process and the PEALD process.
Claims28
A method for forming an integrated circuit comprising:
- depositing a plasma barrier directly over a metal oxide dielectric layer on a substrate by an atomic layer deposition (ALD) process, wherein the ALD process comprises alternately and sequentially contacting the substrate with a metal reactant and a non-plasma reactant;
- and
- depositing a conductive layer by a plasma-enhanced atomic layer deposition (PEALD) process directly over the plasma barrier, wherein the PEALD process comprises alternately and sequentially contacting the substrate with the metal reactant and a plasma reactant.
A method of forming a gate electrode comprising:
- depositing a plasma barrier layer with a thickness of about 1 to 5 nm directly over a dielectric layer on a substrate in a reaction space by a non-plasma atomic layer deposition (ALD) process;
- and
- depositing a conductive material directly over the plasma barrier layer by a plasma-enhanced atomic layer deposition (PEALD) process.
A method of forming an integrated circuit device comprising a TaCN layer over a metal oxide dielectric layer comprising:
- depositing an amorphous TaCN layer directly over a metal oxide dielectric layer on a substrate by a non-plasma atomic layer deposition (ALD) process;
- and
- depositing a TaCN layer directly on the amorphous TaCN layer by a plasma-enhanced ALD(PEALD) process.
Dependencies are inferred from the claim text.