Vapor deposition methods for forming a metal-containing layer on a substrate

A method of forming a capacitor, comprising:

• forming a first capacitor electrode;
• forming a capacitor dielectric over the first capacitor electrode, the forming of the capacitor dielectric comprising:
• providing a vapor comprising at least one titanium precursor compound;
• providing a vapor comprising at least one metal-organic strontium precursor compound;
• and
• contacting the vapor comprising the at least one titanium precursor compound and the vapor comprising the at least one strontium precursor compound with a substrate to form SrTiO3-containing material on at least one surface of the substrate using an atomic layer deposition process comprising multiple atomic layer deposition cycles, wherein the multiple deposition cycles sequentially comprise:
• an initial titanium oxide deposition phase comprising an initial plurality of titanium oxide atomic layer deposition cycles;
• an intermediate deposition phase comprising an intermediate plurality of strontium oxide atomic layer deposition cycles and an intermediate plurality of titanium oxide atomic layer deposition cycles, the intermediate plurality of titanium oxide atomic layer deposition cycles being greater in number than the intermediate plurality of strontium oxide atomic layer deposition cycles and resulting in the intermediate deposition phase to comprise SrTiO3 having a strontium:titanium atomic ratio of from 0.9:1.0 to 1.0:0.9;
• and
• a final titanium oxide deposition phase comprising a final plurality of titanium oxide atomic layer deposition cycles;
• and
• forming a second capacitor electrode over the capacitor dielectric.

A method of forming a capacitor, comprising:

• forming a first capacitor electrode;
• forming a capacitor dielectric over the first capacitor electrode, the forming of the capacitor dielectric comprising:
• providing a vapor comprising at least one titanium precursor compound;
• providing a vapor comprising at least one metal-organic strontium precursor compound;
• providing at least one oxidizing reaction gas;
• and
• contacting the vapor comprising the at least one titanium precursor compound, the vapor comprising the at least one strontium precursor compound, and the at least one oxidizing reaction gas with the substrate to form SrTiO3-containing material on at least one surface of a substrate using an atomic layer deposition process comprising multiple atomic layer deposition cycles, wherein the multiple deposition cycles sequentially comprise:
• an initial titanium oxide deposition phase comprising an initial plurality of titanium oxide atomic layer deposition cycles;
• an intermediate deposition phase comprising an intermediate plurality of strontium oxide atomic layer deposition cycles and an intermediate plurality of titanium oxide atomic layer deposition cycles, the intermediate plurality of titanium oxide atomic layer deposition cycles being greater in number than the intermediate plurality of strontium oxide atomic layer deposition cycles and resulting in the intermediate deposition phase to comprise SrTiO3 having a strontium:titanium atomic ratio of from 0.9:1.0 to 1.0:0.9;
• and
• a final titanium oxide deposition phase comprising a final plurality of titanium oxide atomic layer deposition cycles;
• and
• forming a second capacitor electrode over the capacitor dielectric.

A method of forming a capacitor, comprising:

• forming a first capacitor electrode;
• forming a capacitor dielectric over the first capacitor electrode, the forming of the capacitor dielectric comprising:
• providing a vapor comprising at least one titanium precursor compound;
• providing a vapor comprising at least one metal-organic strontium precursor compound;
• providing at least one reaction gas;
• and
• contacting the vapor comprising the at least one titanium precursor compound and the vapor comprising the at least one strontium precursor compound with a substrate to form SrTiO3-containing material on at least one surface of the substrate using an atomic layer deposition process comprising multiple atomic layer deposition cycles, wherein the multiple deposition cycles sequentially comprise:
• an initial titanium oxide deposition phase comprising at least one titanium oxide deposition cycle;
• and
• a subsequent deposition phase comprising a plurality of strontium oxide atomic layer deposition cycles and a plurality of titanium oxide atomic layer deposition cycles, the plurality of titanium oxide atomic layer deposition cycles in the subsequent deposition phase being greater in number than the plurality of strontium oxide atomic layer deposition cycles in the subsequent deposition phase and resulting in the subsequent deposition phase to comprise SrTiO3 having a strontium:titanium atomic ratio of from 0.9:1.0 to 1.0:0.9, the subsequent deposition phase comprising multiple sets of consecutive strontium oxide atomic layer deposition cycles alternating with consecutive titanium oxide atomic layer deposition cycles;
• and
• forming a second capacitor electrode over the capacitor dielectric.

A method of forming a capacitor, comprising:

• forming a first capacitor electrode;
• forming a capacitor dielectric over the first capacitor electrode, the forming of the capacitor dielectric comprising:
• providing a vapor comprising at least one titanium precursor compound;
• providing a vapor comprising at least one metal-organic strontium precursor compound;
• and
• contacting the vapor comprising the at least one titanium precursor compound and the vapor comprising the at least one strontium precursor compound with a substrate to form a SrTiO3-containing material on at least one surface of the substrate using an atomic layer deposition process comprising multiple atomic layer deposition cycles, wherein the multiple deposition cycles comprises a plurality of strontium oxide atomic layer deposition cycles and a plurality of titanium oxide atomic layer deposition cycles, the plurality of titanium oxide atomic layer deposition cycles being greater in number than the plurality of strontium oxide atomic layer deposition cycles and resulting in the SrTiO3-containing material having a strontium:titanium atomic ratio of from 0.9:1.0 to 1.0:0.9, the multiple deposition cycles comprising multiple sets of consecutive strontium oxide atomic layer deposition cycles alternating with consecutive titanium oxide atomic layer deposition cycles;
• and
• forming a second capacitor electrode over the capacitor dielectric.