Nonvolatile semiconductor storage device, and method for controlling nonvolatile semiconductor storage device
AssigneeKabushiki Kaisha Toshiba
InventorsMakoto Mizukami, Fumitaka Arai
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Abstract
According to an aspect of the present invention, there is provided, a nonvolatile semiconductor storage device including: a substrate; a stacked portion that includes a plurality of conductor layers and a plurality of insulation layers alternately stacked on the substrate, at least one layer of the plurality of conductor layers and the plurality of insulation layers forming a marker layer; a charge accumulation film that is formed on an inner surface of a memory plug hole that is formed in the stacked portion from a top surface to a bottom surface thereof; and a semiconductor pillar that is formed inside the memory plug hole through the charge accumulation film.
Claims4
A method for manufacturing a nonvolatile semiconductor storage device, the method comprising:
- forming a lower stacked portion on a substrate, by alternately stacking a plurality of conductor layers and a plurality of insulation layers;
- forming a marker layer on the lower stacked portion;
- forming an upper stacked portion on the marked layer, by alternately stacking a plurality of conductor layers and a plurality of insulation layers;
- forming a memory plug hole in the upper stacked portion by performing a first etching process;
- further forming the memory plug hole in the marker layer by performing a second etching process;
- further forming the memory plug in the lower stacked portion by performing a third etching process;
- forming a charge accumulation film on an inner surface of the memory plug hole;
- and
- forming a semiconductor pillar inside the memory plug hole through the charge accumulation film.
Dependencies are inferred from the claim text.