Graphene-based non-volatile memory

A method of forming a graphene-based memory device comprising:

• providing a substrate;
• forming a first insulator on the substrate;
• forming a back gate in the first insulation layer;
• forming a second insulation layer on the back gate and the first insulation layer;
• transferring a lower graphene layer onto the second insulation layer;
• forming a third insulation layer on the lower graphene layer;
• forming an upper graphene layer on the third insulation layer;
• and
• forming an opening in the third insulation layer between the lower graphene layer and the upper graphene layer to form a suspended portion of the upper graphene layer and an exposed portion of the lower graphene layer, the opening in the third insulation layer having a depth and width such that the upper graphene layer is configured to bend into the opening to contact the lower graphene layer based on an electrostatic force being applied to the upper graphene layer.

A method of forming a graphene-based memory circuit, comprising:

• forming a graphene-based memory device including first and second graphene layers and a back gate, the first graphene layer bendable with respect to the second graphene layer to selectively contact the second graphene layer based on a voltage level of the backgate;
• forming a word line connected to the back-gate;
• forming a bit line connected to the first graphene layer;
• and
• forming a read line connected to the second graphene layer.