Memory cell that includes a carbon-based memory element and methods of forming the same
AssigneeSanDisk 3D LLC
InventorHuiwen Xu
Life of this patent
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Abstract
Memory cells, and methods of forming such memory cells, are provided that include a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with this invention form a memory cell by (a) depositing a layer of the carbon material above a substrate; (b) doping the deposited carbon layer with a dopant; (c) depositing a layer of the carbon material over the doped carbon layer; and (d) iteratively repeating steps (b) and (c) to form a stack of doped carbon layers having a desired thickness. Other aspects are also provided.
Claims20
A method of forming a memory cell comprising a carbon-based reversible resistance switching material, the method comprising:
- (a) depositing a carbon layer of a carbon material above a substrate;
- (b) doping the deposited carbon layer with a dopant;
- (c) depositing another carbon layer on top of the doped carbon layer;
- and
- (d) iteratively repeating steps (b) and (c) to form a stack of doped carbon layers having a desired thickness,
- wherein doping comprises forming a dopant concentration gradient between a top and a bottom of the deposited carbon layer, and the concentration gradient ranges from a higher concentration at the top of the doped carbon layer to a lower concentration at the bottom of the doped carbon layer.
Dependencies are inferred from the claim text.