Three-dimensional integrated circuit (3DIC) formation process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Wei Wu, Szu Wei Lu, Jing-Cheng Lin, Shin-Puu Jeng, Chen-Hua Yu
Life of this patent
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Abstract
A method includes performing a laser grooving to remove a dielectric material in a wafer to form a trench, wherein the trench extends from a top surface of the wafer to stop at an intermediate level between the top surface and a bottom surface of the wafer. The trench is in a scribe line between two neighboring chips in the wafer. A polymer is filled into the trench and then cured. After the step of curing the polymer, a die saw is performed to separate the two neighboring chips, wherein a kerf line of the die saw cuts through a portion of the polymer filled in the trench.
Claims11
A method comprising:
- performing a laser grooving to remove a low-k dielectric material in a wafer to form a trench, wherein the trench extends from a top surface of the wafer to stop at an intermediate level between the top surface and a bottom surface of the wafer, and wherein the trench is in a scribe line between two neighboring chips in the wafer;
- filling a polymer into the trench;
- curing the polymer;
- and
- after the step of curing the polymer, performing a die saw to separate the two neighboring chips, wherein a kerf line of the die saw cuts through a portion of the polymer filled in the trench and wherein a non-vertical portion of a terminal surface of the polymer in the trench interfaces with a semiconductor substrate of the wafer after the die saw.
A method comprising:
- performing a laser grooving on scribe lines of a wafer to form trenches, until a semiconductor substrate of the wafer is exposed through the trenches, wherein during the laser grooving, portions of low-k dielectric materials in the scribe lines are removed;
- bonding a plurality of first dies onto the wafer;
- filling a polymer into the trenches and into gaps between the plurality of first dies;
- curing the polymer;
- and
- after the step of curing the polymer, performing a die saw to separate the wafer into a plurality of second dies, wherein each of the second dies comprises one of the first dies and a chip in the wafer, and wherein a non-vertical portion of a terminal surface of the polymer in the trenches interfaces with the semiconductor substrate after the die saw.
Dependencies are inferred from the claim text.