Dielectrics containing at least one of a refractory metal or a non-refractory metal
AssigneeMicron Technology, Inc.
InventorsLeonard Forbes, Kie Y. Ahn, Arup Bhattacharyya
Life of this patent
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Abstract
Electronic apparatus and methods of forming the electronic apparatus may include one or more insulator layers having a refractory metal and a non-refractory metal for use in a variety of electronic systems and devices. Embodiments can include electronic apparatus and methods of forming the electronic apparatus having a tantalum aluminum oxynitride film. The tantalum aluminum oxynitride film may be structured as one or more monolayers. The tantalum aluminum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a tantalum aluminum oxynitride film.
Claims21
A method comprising:
- propagating a voltage signal along a conductive path, at least a portion of the conductive path being adjacent to one or more insulators, wherein at least a portion of the one or more insulators comprise TayAlzOxNw, where y, z, x, and w are greater than zero, and a mixture of a refractory metal and a non-refractory metal;
- generating a charge field associated with the voltage signal across a region of the TayAlzOxNw and the mixture between a section of the conductive path and one or more electrodes;
- retaining the charge field between the section of the conductive path and the one or more electrodes based on a first specified signal;
- and
- removing at least a portion of the charge field based on a second specified signal.
A method comprising:
- forming alternating dielectrics layers on a substrate, the layers including at least one of a refractory metal or a non-refractory metal;
- surrounding the alternating layers in an environment comprising at least one of a nitrogen compound or an oxygen compound;
- and
- forming one or more oxynitrides, including forming TayAlzOxNw where y, z, x, and w are greater than zero, using the alternating layers in the environment.
A method comprising:
- generating a microwave plasma using a vapor comprising a nitrogen compound;
- forming a nitride, including forming TayAlzOxNw where y, z, x, and w are greater than zero, using an oxide layer that includes at least one of a refractory metal or a non-refractory metal exposed to the microwave plasma;
- and
- patterning a region comprising at least one of refractory metal oxynitride or a non-refractory metal oxynitride.
Dependencies are inferred from the claim text.