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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLee-Wee Teo, Ming Zhu, Hui-Wen Lin, Bao-Ru Young, Harry-Hak-Lay Chuang
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The disclosure relates to spacer structures of a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate having a first active region and a second active region; a plurality of first gate electrodes having a gate pitch over the first active region, wherein each first gate electrode has a first width; a plurality of first spacers adjoining the plurality of first gate electrodes, wherein each first spacer has a third width; a plurality of second gate electrodes having the same gate pitch as the plurality of first gate electrodes over the second active region, wherein each second gate electrode has a second width greater than the first width; and a plurality of second spacers adjoining the plurality of second gate electrodes, wherein each second spacer has a fourth width less than the third width.
A method of fabricating a semiconductor device, comprising:
A method of fabricating a semiconductor device, comprising:
A method of fabricating a semiconductor device, comprising:
Dependencies are inferred from the claim text.