Retrograde substrate for deep trench capacitors
AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. Basker, Wilfried E. Haensch, Effendi Leobandung, Tenko Yamashita, Chun-Chen Yeh
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Abstract
A semiconductor device includes a substrate having a first doped portion to a first depth and a second doped portion below the first depth. A deep trench capacitor is formed in the substrate and extends below the first depth. The deep trench capacitor has a buried plate that includes a dopant type forming an electrically conductive connection with second doped portion of the substrate and being electrically insulated from the first doped portion.
Claims18
A semiconductor device, comprising:
- a substrate having a first doped portion to a first depth and a second doped portion below the first depth;
- a deep trench capacitor formed in the substrate and extending below the first depth, the deep trench capacitor having a buried plate, the buried plate including a dopant type forming an electrically conductive connection with second doped portion of the substrate and being electrically insulated from the first doped portion;
- a contact extending through the first doped portion into the second doped portion to provide an electrical path between the buried plate and a ground;
- and
- a well formed in the first doped portion above the first depth.
A semiconductor device, comprising:
- a semiconductor-on-insulator substrate having a bulk substrate, a buried dielectric layer and a semiconductor material, the bulk substrate including a first doped portion to a first depth and a second doped portion below the first depth;
- a memory cell comprising an access transistor formed in the semiconductor material and a deep trench capacitor formed in the bulk substrate and extending below the first depth, the deep trench capacitor having a buried plate, the buried plate including a dopant type forming an electrically conductive connection with second doped portion of the substrate and being electrically insulated from the first doped portion;
- a contact extending through the first doped portion into the second doped portion to provide an electrical path between the buried plate and a ground;
- and
- a well formed in the first doped portion, the well having a different dopant type than the first doped portion.
A semiconductor device, comprising:
- a semiconductor-on-insulator substrate having a bulk substrate, a buried dielectric layer and a semiconductor material, the bulk substrate including a first doped portion includes a p− doping to a first depth and a second doped portion includes an n+ doping below the first depth;
- a memory cell comprising a fin field effect access transistor formed in the semiconductor material and a deep trench capacitor formed in the bulk substrate and extending below the first depth, the deep trench capacitor having a buried plate, the buried plate including a dopant type forming an electrically conductive connection with second doped portion of the substrate and being electrically insulated from the first doped portion;
- a contact extending through the first doped portion into the second doped portion to provide an electrical path between the buried plate and a ground;
- a well formed in the first doped portion, the well having a different dopant type than the first doped portion, the well extending from an upper surface of the first doped portion to a position above the first depth;
- and
- at least one electrostatic discharge device formed in the well.
Dependencies are inferred from the claim text.