Cross-hair cell based floating body device
AssigneeMicron Technology, Inc.
InventorWerner Juengling
Life of this patent
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Abstract
A non-planar transistor having floating body structures and methods for fabricating the same are disclosed. In certain embodiments, the transistor includes a fin having upper and lower doped regions. The upper doped regions may form a source and drain separated by a shallow trench formed in the fin. During formation of the fin, a hollow region may be formed underneath the shallow trench, isolating the source and drain. An oxide may be formed in the hollow region to form a floating body structure, wherein the source and drain are isolated from each other and the substrate formed below the fin. In some embodiments, independently bias gates may be formed adjacent to walls of the fin. In other embodiments, electrically coupled gates may be formed adjacent to the walls of the fin.
Claims20
A method, comprising:
- providing a substrate having a first plurality of trenches and a second plurality of trenches;
- etching the substrate to form a fin, wherein the fin comprises the first plurality of trenches and the second plurality of trenches, and wherein etching the substrate comprises etching a region underneath the first plurality of trenches to electrically isolate a first upper doped region and a second upper doped region disposed on each side of each of the first plurality of trenches;
- and
- forming an oxide in the region to form a floating body cell from the first highly doped region and a second highly doped region of each of the first plurality of trenches.
A method, comprising:
- forming an oxide underneath a trench in a fin to electrically isolate a channel of a transistor from a substrate;
- forming a first gate on a first wall of the fin;
- and
- forming a second gate on a second wall of the fin.
A method comprising:
- forming an oxide underneath a trench in a fin to isolate a source and a drain of a transistor to create a floating body cell;
- forming a first gate on a first wall of the fin;
- and
- forming a second gate on a second wall of the fin.
A method, comprising:
- forming a fin in a substrate;
- and
- forming a floating body cell in the fin, wherein the floating body cell comprises a source and a drain separated by a dielectric portion formed in a trench in the fin, and wherein forming the floating body cell comprises forming an isolation region beneath the trench to isolate the source and drain.
Dependencies are inferred from the claim text.