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US 8,557,649 B2Granted
Method for controlling structure height
AssigneeInternational Business Machines Corporation
InventorsRajasekhar Venigalla, Michael Vincent Aquilino, Massud A. Aminpur, Michael P. Belyansky, Unoh Kwon, Christopher Duncan Sheraw, Daewon Yang
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Abstract
Methods for controlling the height of semiconductor structures are disclosed. Amorphous carbon is used as a stopping layer for controlling height variability. In one embodiment, the height of replacement metal gates for transistors is controlled. In another embodiment, the step height of a shallow trench isolation region is controlled.
Claims5
A method of forming a replacement metal transistor gate comprising;
- depositing a layer of amorphous carbon on a sacrificial gate disposed at a location on a semiconductor structure;
- depositing an oxide layer on the layer of amorphous carbon;
- depositing a nitride layer on the oxide layer;
- planarizing the semiconductor structure to expose the layer of amorphous carbon;
- removing the layer of amorphous carbon;
- removing the sacrificial gate;
- and
- forming a metal gate in the location previously occupied by the sacrificial gate.
5 more elements
Dependencies are inferred from the claim text.