Method for fabricating field effect transistor devices with high-aspect ratio mask
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Edward J. Nowak, Jed H. Rankin
Life of this patent
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Abstract
A method for forming feature on a substrate includes forming at least one layer of a feature material on a substrate, patterning a photolithographic resist material on the at least one layer of the feature material, removing portions of the feature material to define a feature, depositing a masking material layer over the resist material and exposed regions of the substrate, modifying a portion of the substrate, and removing the masking material layer and the resist material.
Claims16
A method for forming a field effect transistor device, the method including:
- forming at least one layer of a feature material on a substrate, wherein the feature material comprises a gate dielectric layer;
- patterning a photolithographic resist material on only a first portion of the at least one layer of the feature material;
- removing one or more second portions of the feature material following the patterning of the photolithographic resist material to define a feature and one or more exposed regions of the substrate, wherein the one or more exposed regions are not located between the photolithographic resist material and the first portion of the at least one layer of the feature material;
- depositing a masking material layer over the photolithographic resist material and the one or more exposed regions of the substrate;
- modifying the one or more exposed portions of the substrate by passing ions through the masking material layer and depositing the ions in the one or more exposed portions of the substrate;
- and
- removing the masking material layer and the photolithographic resist material following the modifying.
A method for forming a field effect transistor device, the method including:
- forming layers of gate stack materials on a substrate, wherein the forming layers of the gate stack materials includes forming a gate dielectric layer on the substrate, and forming a polysilicon layer on the gate dielectric layer;
- patterning a photolithographic resist material on the layers of gate stack materials;
- removing portions of the gate stack materials to define a gate stack and one or more exposed regions of the substrate;
- depositing a masking material layer over the photolithographic resist material and the one or more exposed regions of the substrate;
- implanting ions in the one or more exposed regions of the substrate;
- and
- removing the masking material layer to define a spacer after the implanting.
A method for forming a field effect transistor device, the method including:
- forming layers of gate stack materials on a substrate and over a source and drain extension portion disposed on the substrate, wherein the forming layers of the gate stack materials includes forming a gate dielectric layer on the substrate, and forming a polysilicon layer on the gate dielectric layer;
- patterning a photolithographic resist material on the layers of gate stack materials;
- removing portions of the gate stack materials to define a gate stack and one or more expose regions of the substrate;
- depositing a masking material layer over the photolithographic resist material and the one or more exposed regions of the substrate, including the source and drain extension portion;
- implanting ions in the source and drain extension region;
- and
- removing portions of the masking material layer to define a spacer after the implanting.
Dependencies are inferred from the claim text.