Method for providing lateral thermal processing of thin films on low-temperature substrates
AssigneeNcc Nano, LLC
InventorsKurt A. Schroder, Robert P. Wenz
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Abstract
A method for thermally processing a minimally absorbing thin film in a selective manner is disclosed. Two closely spaced absorbing traces are patterned in thermal contact with the thin film. A pulsed radiant source is used to heat the two absorbing traces, and the thin film is thermally processed via conduction between the two absorbing traces. This method can be utilized to fabricate a thin film transistor (TFT) in which the thin film is a semiconductor and the absorbers are the source and the drain of the TFT.
Claims18
A method for thermally processing a very thin film, said method comprising:
- patterning two absorbing traces adjacent to a very thin film, wherein said two absorbing traces are made of ceramic, wherein said very thin film is located on top of a substrate;
- irradiating said two absorbing traces with at least one electromagnetic pulse to heat up said two absorbing traces;
- and
- allowing heat from said two absorbing traces to thermally process said very thin film.
A method for fabricating a thin film transistor, said method comprising:
- patterning two absorbing traces adjacent to a very thin film, wherein said two absorbing traces are made of ceramic, wherein said very thin film is located on top of a substrate;
- irradiating said two absorbing traces with at least one electromagnetic pulse to heat up said two absorbing traces, and allowing heat from said two absorbing traces to thermally process said very thin film;
- depositing a dielectric layer on said two absorbing trace and said very thin film;
- and
- forming a gate by depositing a conductive trace on top of said dielectric layer.
Dependencies are inferred from the claim text.