US 8,557,616 B2Granted

Method for manufacturing a monolithic LED micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic LED micro-display

AssigneeNano and Advanced Materials Institute Limited

InventorsKei May Lau, Chi Wing Keung, Zhaojun Liu

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Abstract

A high-resolution, Active Matrix (AM) programmed monolithic Light Emitting Diode (LED) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an LED micro-array and an AM panel, and combining the resulting LED micro-array and AM panel using the flip-chip technology. The LED micro-array is grown and fabricated on a sapphire substrate and the AM panel can be fabricated using CMOS process. LED pixels in a same row share a common N-bus line that is connected to the ground of AM panel while p-electrodes of the LED pixels are electrically separated such that each p-electrode is independently connected to an output of drive circuits mounted on the AM panel. The LED micro-array is flip-chip bonded to the AM panel so that the AM panel controls the LED pixels individually and the LED pixels exhibit excellent emission uniformity. According to this constitution, incompatibility between the LED process and the CMOS process can be eliminated.

Claims17

Dependent claims

A method for manufacturing a monolithic Light Emitting Diode (LED) micro-display panel on an Active Matrix (AM) panel, comprising:

providing a substrate of the LED micro-display panel;
overlaying a plurality of layers of material on a surface of the substrate, the plurality of overlaying layers of material being configured in combination to emit light when activated;
patterning the plurality of overlaying layers of material by removing a part of each overlaying layers all the way down to the surface of the substrate;
depositing a current spreading layer on the patterned plurality of overlaying layers of material and surface of the substrate;
providing a metal multilayer on the current spreading layer;
patterning the metal multilayer in such a configuration that a first portion of the metal multilayer, which lies on the patterned plurality of overlaying layers of material, and a second portion of the metal multilayer, which lies on the surface of the substrate are conductively disconnected, thereby forming the monolithic LED micro-display panel;
and
combining the monolithic LED micro-display panel with the AM panel, said AM panel comprising a plurality of active control circuit chips with conductive solder material, said combining comprising flip-chip bonding the monolithic LEDs to the active control circuit chips via the conductive solder material, wherein each of the monolithic LEDs is electrically insulated from one another and independently controllable by corresponding ones of the active control circuit chips bonded thereto.

5 more elements

A method for manufacturing an assembly of a monolithic Light Emitting Diode (LED) micro-display panel including a plurality of LEDs thereon and an Active Matrix (AM) panel, comprising:

providing a substrate of the AM panel;
providing active control circuits on the substrate of the AM panel;
providing conductive solder material on the active control circuits;
providing a substrate of the LED micro-display panel comprising a patterned plurality layers of material overlaid on a surface of the substrate of the LED micro-display panel, and having a current spreading layer on the a patterned plurality of layers and on a surface of the substrate of the LED micro-display panel;
providing a metal multilayer on the current spreading layer and patterning the metal multilayer in a configuration that a first portion of the metal multilayer, which lies on the patterned plurality of overlaying layers of material, and a second portion of the metal multilayer, which lies on the surface of the substrate are conductively disconnected, form the LED micro-display panel;
and
combining the AM panel with the LED micro-display panel comprising monolithic LEDs electrically insulated from one another, and flip-chip bonding the active control circuits to the plurality of monolithic LEDs via the conductive solder material, with the monolithic LEDs independently controllable by the active control circuits.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/130,442Filed 1 Jun 2010 · us provisional application
Priority: 9 Dec 2009
Published: US 2011/0309378 A122 Dec 2011
Granted: 15 Oct 2013
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 86/40
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless…
H10D 86/60
Characterised by multiple TFTs: wherein the TFTs are in active matrices
H10H 20/813
Bodies: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within…
H10H 29/142
Comprising multiple light-emitting semiconductor components: two-dimensional arrangements, e.g. asymmetric LED layout