Method for fabricating micro and nanostructures in a material
AssigneeCalifornia Institute of Technology
InventorsMichael David Henry, Michael Shearn, Axel Scherer
Life of this patent
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Abstract
A method to determine minimum etch mask dosage or thickness as a function of etch depth or maximum etch depth as a function of etch mask implantation dosage or thickness, for fabricating structures in or on a substrate through etch masking via addition or removal of a masking material and subsequent etching.
Claims23
In a method for fabricating structures in or on a substrate through etch masking via addition or removal of a masking material and subsequent etching, a method to determine i) minimum etch mask dosage or thickness as a function of etch depth or ii) maximum etch depth as a function of etch mask implantation dosage or thickness, comprising:
- determining a substrate etch rate (ketch);
- determining a mask erosion rate (kerosion);
- determining a threshold dose (dthreshold);
- and
- determining a minimum etch mask thickness or dosage (dcritical) or the maximum etch depth (hcritical) according to the function
- h
- critical
- =
- k
- etch
- k
- erosion
- *
- (
- d
- critical
- -
- d
- threshold
- )
- .
Dependencies are inferred from the claim text.