Methods of integrated shielding into MTJ device for MRAM
AssigneeQUALCOMM Incorporated
InventorsWei-Chuan Chen, Xia Li, Seung H. Kang
Life of this patent
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Abstract
Methods and apparatus for shielding a shielding a non-volatile memory, such as shielding a magnetic tunnel junction (MTJ) device from a magnetic flux are provided. In an example, a shielding layer is formed adjacent to an electrode of an MTJ device, such that the shielding layer substantially surrounds a surface of the electrode, and a metal line is coupled to the shielding layer. The metal line can be coupled to the shielding layer by a via.
Claims30
A method for protecting a magnetic tunnel junction (MTJ) device by utilizing an integrated shielding apparatus, comprising:
- forming the MTJ device on a substrate, wherein the MTJ device comprises:
- a bottom electrode;
- one or more pinned layers on the bottom electrode;
- a barrier layer on the one or more pinned layers;
- one or more free layers on the barrier layer;
- one or more hardmask layers on the one or more free layers;
- and
- a top electrode on the one or more hardmask layers;
- forming a shielding layer over the top electrode, such that the shielding layer substantially surrounds a top surface of the top electrode, wherein the shielding layer is formed of a high magnetic permeability material;
- and
- forming a metal line connection on the shielding layer.
A non-transitory computer-readable medium, comprising instructions stored thereon that, if executed by a lithographic device, cause the lithographic device to perform at least a part of a method, comprising:
- forming a magnetic tunnel junction (MTJ) device on a substrate, wherein the MTJ device comprises:
- a bottom electrode;
- one or more pinned layers on the bottom electrode;
- a barrier layer on the one or more pinned layers;
- one or more free layers on the barrier layer;
- one or more hardmask layers on the one or more free layers;
- and
- a top electrode on the one or more hardmask layers;
- forming a shielding layer over the top electrode, such that the shielding layer substantially surrounds a top surface of the top electrode, wherein the shielding layer is formed of a high magnetic permeability material;
- and
- forming a metal line connection on the shielding layer.
A magnetic tunnel junction (MTJ) device protected by an integrated shielding apparatus, comprising:
- the MTJ device on a substrate, wherein the MTJ device comprises:
- a bottom electrode;
- one or more pinned layers on the bottom electrode;
- a barrier layer on the one or more pinned layers;
- one or more free layers on the barrier layer;
- one or more hardmask layers on the one or more free layers;
- and
- a top electrode on the one or more hardmask layers;
- a shielding layer over the top electrode, such that the shielding layer substantially surrounds a top surface of the top electrode, wherein the shielding layer is formed of a high magnetic permeability material;
- and
- a metal line connection on the shielding layer.
A magnetic tunnel junction (MTJ) device protected by an integrated shielding apparatus, comprising:
- means for reducing a magnetic field intensity in a vicinity of an MTJ electrode using a shielding layer adjacent to the MTJ electrode, such that the shielding layer substantially surrounds a surface of the MTJ electrode, wherein the shielding layer is formed of a high magnetic permeability material;
- and
- a metal line connection on the shielding layer.
A method for protecting a magnetic tunnel junction (MTJ) device by utilizing an integrated shielding apparatus, comprising:
- forming the MTJ device on a substrate, wherein the MTJ device comprises:
- a bottom electrode;
- one or more pinned layers on the bottom electrode;
- a barrier layer on the one or more pinned layers;
- one or more free layers on the barrier layer;
- and
- one or more hardmask layers on the one or more free layers;
- forming a shielding layer over the one or more hardmask layers, such that the shielding layer completely surrounds a top surface of the one or more hardmask layers, wherein the shielding layer is formed of a high magnetic permeability material;
- forming a top electrode layer over the shielding layer;
- and
- forming a metal line connection on the top electrode layer.
A non-transitory computer-readable medium, comprising instructions stored thereon that, if executed by a lithographic device, cause the lithographic device to perform at least a part of a method, comprising:
- forming an MTJ device on a substrate, wherein the MTJ device comprises:
- a bottom electrode;
- one or more pinned layers on the bottom electrode;
- a barrier layer on the one or more pinned layers;
- one or more free layers on the barrier layer;
- and
- one or more hardmask layers on the one or more free layers;
- forming a shielding layer over the one or more hardmask layers, such that the shielding layer completely surrounds a top surface of the one or more hardmask layers, wherein the shielding layer is formed of a high magnetic permeability material;
- forming a top electrode layer over the shielding layer;
- and
- forming a metal line connection on the top electrode layer.
A magnetic tunnel junction (MTJ) device protected by an integrated shielding apparatus, comprising:
- the MTJ device on a substrate, wherein the MTJ device comprises:
- a bottom electrode;
- one or more pinned layers on the bottom electrode;
- a barrier layer on the one or more pinned layers;
- one or more free layers on the barrier layer;
- and
- one or more hardmask layers on the one or more free layers;
- a shielding layer over the one or more hardmask layers, wherein the shielding layer is formed of a high magnetic permeability material, such that the shielding layer completely surrounds a top surface of the one or more hardmask layers;
- a top electrode layer over the shielding layer;
- and
- a metal line connection on the top electrode layer.
A method, comprising:
- forming a magnetic tunnel junction (MTJ) device on a substrate, wherein the MTJ device comprises:
- an MTJ electrode;
- and
- a shielding layer adjacent to the MTJ electrode and substantially surrounding a surface of the MTJ electrode, wherein the shielding layer is formed of a high magnetic permeability material.
A non-transitory computer-readable medium, comprising instructions stored thereon that, if executed by a lithographic device, cause the lithographic device to perform at least a part of a method, comprising:
- forming a magnetic tunnel junction (MTJ) device on a substrate, wherein the MTJ device comprises:
- an MTJ electrode;
- and
- a shielding layer adjacent to the MTJ electrode and substantially surrounding a surface of the MTJ electrode, wherein the shielding layer is formed of a high magnetic permeability material.
An apparatus, comprising:
- an magnetic tunnel junction (MTJ) electrode;
- and
- a shielding layer adjacent to the MTJ electrode and substantially surrounding a surface of the MTJ electrode, wherein the shielding layer is formed of a high magnetic permeability material.
Dependencies are inferred from the claim text.