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US 8,557,567 B2Granted
Method for fabricating nanogap and nanogap sensor
AssigneeMicobiomed. Co. Ltd.
InventorsBong hyun Chung, Sang kyu Kim, Hye jung Park
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Abstract
The present invention relates to a method of fabricating a nanogap and a nanogap sensor, and to a nanogap and a nanogap sensor fabricated using the method. The present invention relates to a method of fabricating a nanogap and a nanogap sensor, which can be realized by an anisotropic etching using a semiconductor manufacturing process. According to the method of present invention, the nanogap and nanogap sensor can be simply and cheaply produced in large quantities.
Claims12
A nanogap sensor for detecting variations of an analysis object in electrical characteristics, comprising:
- a substrate having V-shaped section thereon, the V-shaped section including a top width at a top portion of the substrate and a bottom width at a bottom portion of the substrate in such a configuration that the bottom width has a nano-scaled gap size of several nanometers to several hundreds of nanometers;
- an oxide layer on a surface of the substrate including both sidewalls of the V-shaped section opposite to each other, thereby decreasing the width of the V-shaped section;
- and
- a pair of electrodes on the oxide layer extending to both of the sidewalls of the V-shaped section to a top surface of the substrate, respectively, the analysis object being attached to each of the electrodes close to the bottom width of the V-shaped section, respectively.
1 more element
Dependencies are inferred from the claim text.