Method of making a metal oxide film, laminates and electronic devices
AssigneesTDK Corporation, National Institute of Advanced Industrial Science and Technology
InventorsYuki Miyamoto, Tetsuo Tsuchiya
Life of this patent
Estimating the term…
Abstract
An object is to provide a method of making a metal oxide film with a sufficiently high degree of crystal orientation, without difficulties, at low cost, and with little damage to a base material and the metal oxide film, and to provide laminates and electronic devices using the same. A method includes a step of forming a metal film having a (111) plane, on a base material; a step of forming a metal oxide film on the (111) plane of the metal film; and a step of maintaining a temperature of the metal oxide film formed on the (111) plane of the metal film, at 25-600° C. and irradiating the metal oxide film with UV light.
Claims5
A method of making a metal oxide film, the method comprising:
- a step of forming a metal film having a (111) plane, on a base material;
- a step of directly forming a metal oxide film on the (111) plane of the metal film;
- and
- a step of maintaining a temperature of the metal oxide film at 300-400° C. and irradiating the metal oxide film with UV light to obtain a crystalline metal oxide film, wherein
- the metal oxide film is BaTiO3 or (Ba, Sr)TiO3,
- the UV light is pulsed laser light having energy of 70-90 mJ/cm2 per pulse,
- the obtained crystalline metal oxide film after the step of maintaining a temperature and irradiating the metal oxide film is orientated to (100) plan;
- a repetition rate of the pulsed laser light is 1-100 Hz, and
- a number of shots is from 100 to 10,000.
Dependencies are inferred from the claim text.