Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head

A material for forming a conductive antireflection film, comprising:

• a base resin having conductivity;
• a crosslinking agent;
• a thermal acid generator;
• and
• a solvent,
• wherein the thermal acid generator is at least any one selected from the group consisting of methyl naphthalenesulfonate, benzyl-3-methoxycarbonylbenzenesulfonate, 2-nitroethyl benzenesulfonate, 3-acetoaminopropyl-p-toluenesulfonate, diethyl sulfate, di-n-propyl sulfate, di-n-butyl sulfate, bis(2-ethylhexyl)sulfate, dilauryl sulfate, distearyl sulfate, bis(2-phenethyl)sulfate, bis(α-naphthylmethyl)sulfate, dibenzyl sulfate, bis(2-butoxyethyl)sulfate, bis(2-phenoxyethyl)sulfate, bis(2-octylthioethyl) sulfate, bis[2-(4-tolyl)thioethyl]sulfate, bis(4-nitroethyl)sulfate, bis(2-chloroethyl)sulfate, dicyclohexyl sulfate, bis(4-methylcyclohexyl)sulfate, bis(4-methoxycyclohexyl)sulfate, bis(4-butylthiocyclohexyl)sulfate, 2-nitrobenzyl tosylate, 4-nitrobenzyl tosylate, 1-trifluoromethyl-6-nitrobenzyl-4-chlorobenzene sulfonate, 2-trifluoromethyl-6-nitrobenzyl-4-nitrobenzene sulfonate, and 2-butynyl tetramethylene sulfonium hexafluoroantimonate, and
• wherein the base resin comprises at least one selected from the group consisting of an aniline-2-methoxy-5-propyloxy-3-sulfonate polymer and a 3-amino-4-methoxybenzene sulfonate/3-amino-4-methylbenzene sulfonate (60/40) copolymer.