Methods of forming fine patterns and methods of fabricating semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsCha-won Koh, Min-joon Park, Chang-Min Park
Life of this patent
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Abstract
Method of forming fine patterns and methods of fabricating semiconductor devices by which a photoresist (PR) pattern may be transferred to a medium material layer with a small thickness and a high etch selectivity with respect to a hard mask to form a medium pattern and the hard mask may be formed using the medium pattern. According to the methods, the PR pattern may have a low aspect ratio so that a pattern can be transferred using a PR layer with a small thickness without collapsing the PR pattern.
Claims20
A method of forming a fine pattern, comprising:
- forming a first hard mask material layer on a substrate;
- forming a medium material layer to a thickness of less than or equal to about 20 nm on the first hard mask material layer;
- forming a photoresist (PR) pattern on the medium material layer;
- forming a medium pattern by removing a portion of the medium material layer using the PR pattern as a first mask;
- forming a first hard mask pattern by removing a portion of the first hard mask material layer using the medium pattern as a second mask;
- and
- removing a portion of the substrate.
A method of forming a fine pattern, comprising:
- forming a hard mask material layer on a substrate;
- forming a medium material layer on the hard mask material layer;
- forming a photoresist (PR) pattern with an aspect ratio of less than or equal to about 3 on the medium material layer;
- forming a medium pattern by patterning the medium material layer using the PR pattern as an etch mask;
- forming a hard mask pattern by etching the hard mask material layer using the medium pattern as an etch mask;
- and
- etching the substrate using the hard mask pattern as an etch mask,
- wherein a thickness of the medium material layer is determined such that an aspect ratio of the PR pattern remaining after the forming a medium pattern is greater than or equal to about 0.3.
A method of forming a fine pattern, comprising:
- forming a first layer on a substrate layer;
- forming a second layer on the first layer;
- forming a photoresist (PR) mask on the second layer;
- forming a second layer mask exposing the first layer by removing a material of the second layer through the PR mask;
- forming a first layer mask exposing the substrate layer by removing a material of the first layer through the second layer mask, a removal rate of the material of the first layer being greater than a removal rate of a material of the second layer mask;
- and
- forming a substrate layer pattern by removing a material of the substrate layer through the first layer mask.
Dependencies are inferred from the claim text.