Physical vapor deposition with phase shift
AssigneeFUJIFILM Corporation
InventorsYouming Li, Jeffrey Birkmeyer, Takamichi Fujii, Takayuki Naono, Yoshikazu Hishinuma
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Abstract
A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate.
Claims12
A method of physical vapor deposition comprising:
- applying, using a first radio frequency power supply, a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a dielectric sputtering target;
- applying, using a second radio frequency power supply different from the first radio frequency power supply, a powered second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a dielectric substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the dielectric substrate, the positive self bias direct current voltage being between 10V and 100V;
- and
- depositing material from the dielectric sputtering target onto the dielectric substrate.
Dependencies are inferred from the claim text.