Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate
AssigneeSaint-Gobain Cristaux Et Detecteurs
InventorsEric Aujol, Jean-Pierre Faurie, Bernard Beaumont
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Abstract
A method for manufacturing a single crystal of nitride by epitaxial growth on a substrate appropriate for the growth of the crystal. The substrate includes, deposited on the edges of its growth surface, a mask appropriate to prevent growing of the single crystal on the edges of the substrate.
Claims16
A substrate appropriate for the growth of a nitride single crystal by epitaxial growth, wherein the substrate comprises a base layer and an upper crystalline layer compatible with the growth of the nitride crystal and sacrificial layer between the base layer and the upper layer, and wherein the substrate comprises a mask deposited on an edge of a growth surface configured to prevent growing of the nitride single crystal on the a vertical surface of the substrate.
Dependencies are inferred from the claim text.