Plasma dry etching apparatus having coupling ring with cooling and heating units
AssigneeSamsung Electronics Co., Ltd.
InventorsMin-Joon Park, Su-Hong Kim
Life of this patent
Estimating the term…
Abstract
A plasma dry etching apparatus includes a pedestal in a process chamber, the pedestal being configured to support a wafer, a cathode electrode and a plate electrode in the process chamber, the cathode and plate electrodes being configured to apply radio-frequency (RF) power, an edge ring on an edge of the pedestal, a coupling ring having a first side on the pedestal and a second side on the edge ring, an edge cooling unit in the coupling ring, the edge cooling unit being configured to cool the edge ring to drop a temperature of an extreme edge of the wafer, and an edge heating unit in the coupling ring, the edge heating unit being configured to heat the edge ring to raise the temperature of an extreme edge of the wafer.
Claims19
A plasma dry etching apparatus, comprising:
- a process chamber;
- a pedestal in the process chamber, the pedestal being configured to support a wafer;
- a cathode electrode and a plate electrode in the process chamber, the cathode and plate electrodes being configured to apply radio-frequency (RF) power;
- an edge ring that is on an edge of the pedestal and that is substantially coplanar with an uppermost side of the pedestal;
- a coupling ring having a first side in a recess within the pedestal and a second side under the edge ring;
- a temperature adjuster configured to adjust a temperature of a first region of the wafer;
- an edge cooling unit in the coupling ring, the edge cooling unit being configured to cool the edge ring and a second region including an extreme edge of the wafer;
- an edge heating unit in the coupling ring, the edge heating unit being configured to heat the edge ring and the second region including the extreme edge of the wafer, wherein the edge cooling unit and the edge heating unit of the coupling ring are controlled independently from the temperature adjuster to adjust a temperature of the second region of the wafer, and wherein the first region is disposed inside the second region.
A plasma dry etching apparatus, comprising:
- a process chamber;
- a electrode in an upper portion of the process chamber;
- a pedestal configured to support a wafer in process chamber, the pedestal being under the electrode;
- a edge ring supporting side surfaces of the pedestal, an upper surface of the edge ring being in direct contact with a lower surface of an extreme edge of the wafer;
- a temperature element configured to control a temperature of the entire wafer;
- a coupling ring attached under the edge ring, the coupling ring overlapping a second region including the extreme edge of the wafer, the coupling ring including an edge cooling unit and an edge heating unit;
- and
- a thermal insulating layer configured to reduce cut off heat transmission between the pedestal and the coupling ring, the thermal insulating layer being between the pedestal and the coupling ring, wherein the edge cooling unit and the edge heating unit of the coupling ring are controlled independently from the temperature adjuster to adjust a temperature of the extreme edge of the wafer.
Dependencies are inferred from the claim text.