Systems and methods for stochastic models of mask process variability
AssigneeMicron Technology, Inc.
InventorsMing-Chuan Yang, Jung H. Woo
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Abstract
Systems and methods are disclosed for a stochastic model of mask process variability of a photolithography process, such as for semiconductor manufacturing. In one embodiment, a stochastic error model may be based on a probability distribution of mask process error. The stochastic error model may generate a plurality of mask layouts having stochastic errors, such as random and non-uniform variations of contacts. In other embodiments, the stochastic model may be applied to critical dimension uniformity (CDU) optimization or design rule (DR) sophistication.
Claims13
A non-transitory tangible machine-readable medium having code stored thereon, the code comprising instructions for:
- applying an optical proximity correction (OPC) to a mask layout for a photolithography process to generate a post-OPC layout;
- determining a plurality of stochastic error mask layouts from the post OPC layout, the plurality of stochastic error mask layouts from the post OPC layout include a probability distribution of errors that are applied to the post OPC layout in order to more accurately simulate mask process variability;
- and
- analyzing the plurality of stochastic error mask layouts for critical dimension uniformity (CDU).
A non-transitory tangible machine-readable medium having code stored thereon, the code comprising instructions for:
- applying an optimal proximity correction (OPC) to a mask layout for a photolithography process to generate a post-OPC mask layout;
- determining a plurality of stochastic error mask layouts from the post OPC layout, the plurality of stochastic error mask layouts from the post OPC layout include a probability distribution of errors that are applied to the post OPC layout in order to more accurately simulate mask process variability;
- and
- verifying the plurality of stochastic error mask layouts for mask errors using a deterministic model.
Dependencies are inferred from the claim text.