Method of driving GaN-based semiconductor light emitting element, method of driving GaN-based semiconductor light emitting element of image display device, method of driving planar light source device, and method of driving light emitting device

A method of driving a GaN-based semiconductor light emitting element of an image display device including the GaN-based semiconductor light emitting element for displaying an image, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising:

• starting light emission by the start of the injection of carrier;
• then
• stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active layer;
• and
• increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.

A method of driving a planar light source device for irradiating light to a transmissive or semi-transmissive liquid crystal display device from a rear surface, a GaN-based semiconductor light emitting element as a light source included in the planar light source device being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising:

• starting light emission by the start of the injection of carrier;
• then
• stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active layer;
• and
• increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.

A method of driving a light emitting device including a GaN-based semiconductor light emitting element and a color conversion material which receives light emitted from the GaN-based semiconductor light emitting element and emits light with a wavelength different from a wavelength of the light emitted from the GaN-based semiconductor light emitting element, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising:

• starting light emission by the start of the injection of carrier;
• then
• stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active layer;
• and
• increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.