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US 8,553,486 B2Granted
Semiconductor memory device correcting fuse data and method of operating the same
AssigneeSamsung Electronics Co., Ltd.
InventorByung-Hoon Jeong
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Abstract
A semiconductor memory device and method of operating same are described. The semiconductor memory device includes a first anti-fuse array having a plurality of first anti-fuse elements that store first fuse data, a second anti-fuse array having a plurality of second anti-fuse elements that store error correction code (ECC) data associated with the first fuse data, and an ECC decoder configured to generate second fuse data by correcting the first fuse data using the ECC data.
Claims8
A semiconductor memory device comprising:
- a first anti-fuse array comprising a plurality of first anti-fuse elements that store first data;
- a second anti-fuse array comprising a plurality of second anti-fuse elements that store error correction code (ECC) data associated with the first data;
- an ECC decoder configured to generate second fuse data by correcting the first data using the ECC data;
- and
- an I/O circuit configured to program the first anti-fuse array with the first data using a external voltage higher than a operating voltage.
2 more elements
Dependencies are inferred from the claim text.