Semiconductor memory device
AssigneeHynix Semiconductor Inc.
InventorsDong-Geun Lee, Chang-Ho Do
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Abstract
A semiconductor memory device includes a main word line signal generator configured to generate a main word line signal having a first swing width, a sub-word line signal generator configured to generate a first sub-word line signal and a second sub-word line signal having a second swing width and a third swing width, respectively, a first sub-word line driver configured to drive a corresponding sub-word line with the first sub-word line signal or a negative word line voltage in response to the main word line signal, and a second sub-word line driver configured to drive the corresponding sub-word line with the negative word line voltage in response to the second sub-word line signal.
Claims20
A semiconductor memory device, comprising:
- a main word line signal generator configured to generate a main word line signal having a first swing width;
- a sub-word line signal generator configured to generate a first sub-word line signal and a second sub-word line signal having a second swing width and a third swing width, respectively;
- a first sub-word line driver configured to drive a corresponding sub-word line with the first sub-word line signal or a negative word line voltage in response to the main word line signal;
- and
- a second sub-word line driver configured to drive the corresponding sub-word line with the negative word line voltage in response to the second sub-word line signal,
- wherein the second sub-word line signal is activated later than the first sub-word line signal by a first predetermined time.
A system having a semiconductor memory device, the system comprising:
- a block selection address generation unit configured to generate an address;
- a sub-word line selection unit configured to generate a first sub-word line signal and a second sub-word line signal having different swing widths;
- a main word line selection unit configured to generate a main word line signal;
- and
- a sub-word line driving unit configured to drive a selected sub-word line,
- wherein the second sub-word line signal is activated later than the first sub-word line signal by a first predetermined time.
Dependencies are inferred from the claim text.