Three dimensional memory system with page of data across word lines

A non-volatile storage apparatus, comprising:

• a monolithic three dimensional array of non-volatile storage elements, the array of non-volatile storage elements is arranged in stripes along a direction of rows of non-volatile storage elements such that each stripe includes multiple rows, each stripe includes multiple blocks of the non-volatile storage elements;
• a plurality of word lines connected to rows of the non-volatile storage elements;
• a plurality of bit lines connected to the non-volatile storage elements, the bit lines are grouped into columns, each block has multiple columns of bit lines;
• row decoders connected to the word lines, the row decoders are positioned underneath the array of non-volatile storage elements;
• data lines;
• sense amplifiers in communication with the data lines;
• selection circuits in communication with the bit lines and data lines for selectively connecting bit lines to data lines;
• multi-block column decoders in communication with and controlling the selection circuits, the multi-block column decoders are arranged outside the array of non-volatile storage elements, each multi-block column decoder selects corresponding columns of bit lines for multiple blocks in one stripe;
• and
• a control circuit in communication with the row decoders and the multi-block column decoders to store one page of data across multiple word lines and within one column of bit lines by selecting one column of bit lines using the multi-block column decoders and programming non-volatile storage elements connected to the bit lines of the selected column and multiple word lines while maintaining the selection of the one column.

A method for programming non-volatile storage, comprising:

• selecting a subset of one or more blocks of non-volatile storage elements, each of the blocks of non-volatile storage elements includes columns of bit lines and sets of word lines;
• selecting a column of bit lines in each of the selected one or more blocks, the selecting a column of bit lines includes using a global column selector that selects corresponding columns of bit lines in one of the selected blocks and in unselected blocks;
• and
• programming non-volatile storage elements in the one or more selected blocks that are connected to bit lines of the selected column and multiple word lines while maintaining the selection of the column of bits lines in each of the selected blocks.