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US 8,553,465 B2Granted
Semiconductor memory device and method of programming the same
AssigneeSK hynix Inc.
InventorYoung Soo Park
Life of this patent
Estimating the term…
Abstract
A method of programming a semiconductor memory device includes a first program step for performing a program by supplying a first program voltage, having a specific amount, to a selected word line of the semiconductor memory device for a set time and a second program step for performing a program by supplying, to the selected word line, a second program voltage which is a step pulse gradually rising from a start voltage lower than the first program voltage.
Claims9
A method of programming a semiconductor memory device, comprising:
- a first program step for performing a program by supplying a first program voltage, having a specific level, to a selected word line of the semiconductor memory device for a set time;
- and
- a second program step for performing a program by supplying, to the selected word line, a second program voltage which includes step pulses gradually rising from a start voltage lower than the first program voltage,
- wherein each of the step pulses is supplied during a time shorter than the set time for which the first program voltage is supplied.
1 more element
A semiconductor memory device, comprising:
- a memory cell array configured to comprise a plurality of memory cells;
- peripheral circuits configured to store data in the memory cells and read data stored in the memory cells;
- and
- a controller configured to control the peripheral circuits so that, in a program mode, a first program voltage having a specific level is supplied to a selected word line for a set time and a second program voltage which includes step pulses gradually rising from a start voltage lower than the first program voltage is supplied to the selected word line,
- wherein each of the step pulses is supplied during a time shorter than the set time for which the first program voltage is supplied.
2 more elements
A method of programming a semiconductor memory device, comprising:
- performing a first program operation by applying a first program voltage, having a specific level, to a selected word line of the semiconductor memory device;
- and
- performing a second program operation by applying incremental step pulses to the selected word line of the semiconductor memory device, wherein the amplitude of the first program voltage pulse is larger than a start voltage of the incremental step pulses of the second program operation, wherein a step voltage of the incremental step pulses of the second program operation increases, and wherein the duration of the first program voltage is longer than each of the incremental step pulses of the second program operation.
Dependencies are inferred from the claim text.