Back to results
US 8,553,458 B2Granted
Methods for segmented programming and memory devices
AssigneeMicron Technology, Inc.
InventorJung-Sheng Hoei
Life of this patent
Estimating the term…
Abstract
Methods for segmented programming, program verify, and memory devices are disclosed. One such method for programming includes biasing memory cells with a programming voltage and program verifying the memory cells with a plurality of ramped voltage signal segments, wherein each ramped voltage signal segment has a different start voltage and a different end voltage than the other ramped voltage signal segments.
Claims20
A method of programming memory cells comprising:
- programming a first segment of memory cells with a first segment of data, wherein a first ramped voltage signal segment is used to verify whether the first segment of memory cells is programmed with the first segment of data;
- and
- programming a second segment of memory cells with a second segment of data, wherein a second ramped voltage signal segment is used to verify whether the second segment of memory cells is programmed with the second segment of data,
- wherein the first ramped voltage signal segment is different than the second ramped voltage signal segment.
1 more element
An apparatus comprising:
- memory cells;
- and
- a controller configured to control execution of a method comprising:
- programming a first segment of the memory cells with a first segment of data, wherein a first ramped voltage signal segment is used to verify whether the first segment of the memory cells is programmed with the first segment of data;
- and
- programming a second segment of the memory cells with a second segment of data, wherein a second ramped voltage signal segment is used to verify whether the second segment of the memory cells is programmed with the second segment of data.
3 more elements
Dependencies are inferred from the claim text.