STT-MRAM cell structures
AssigneeMicron Technology, Inc.
InventorsJun Liu, Gurtej Sandhu
Life of this patent
Estimating the term…
Abstract
A magnetic cell structure including a nonmagnetic bridge, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, and a nonmagnetic bridge electrically connecting the free layer and the pinned layer. The shape and/or configuration of the nonmagnetic bridge directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer of the structure is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.
Claims21
A memory cell comprising:
- a pinned ferromagnetic layer;
- a dielectric layer formed on the pinned ferromagnetic layer;
- a free ferromagnetic layer formed on the dielectric layer;
- and
- a nonmagnetic bridge coupled to each of the pinned layer and the free layer.
A memory cell, comprising:
- a free layer;
- and
- a pinned layer;
- and
- a nonmagnetic bridge extending between and electrically coupling the free layer and the pinned layer.
A memory cell, comprising:
- a pinned layer;
- a dielectric layer formed on the pinned layer;
- a nonmagnetic bridge formed in a recess of the dielectric layer;
- and
- a free layer formed on the dielectric layer, wherein the nonmagnetic bridge extends between the pinned layer and the free layer.
Dependencies are inferred from the claim text.