EUV high throughput inspection system for defect detection on patterned EUV masks, mask blanks, and wafers

An extreme ultraviolet (EUV) inspection system comprising:

• a light source directed to an inspected surface;
• a detector for detecting light deflected from the inspected surface, the detector including a plurality of sensor modules;
• and
• an optic configuration for directing the light from the inspected surface to the detector, the optic configuration providing magnification of at least 100× within an optical path less than 5 meters long, wherein the optic configuration includes:
• one of a scintillator for converting EUV light into visible light and a photocathode for converting EUV light into electrons;
• four mirrors in an unobscured configuration, the unobscured configuration directing light from the inspected surface to the scintillator/photocathode in four bounces;
• and
• a magnifying system coupled between the scintillator/photocathode and the detector for further magnification.

An extreme ultraviolet (EUV) inspection system comprising:

• a light source directed to an inspected surface;
• a detector for detecting light deflected from the inspected surface, the detector including a plurality of sensor modules;
• and
• an optic configuration for directing the light from the inspected surface to the detector, the optic configuration providing magnification of at least 100× within an optical path less than 5 meters long,
• wherein the optic configuration includes two mirrors in an obscured configuration, the obscured configuration directing light from the inspected surface to the detector in four bounces.