Thin film transistor array substrate, display panel, liquid crystal display apparatus and manufacturing method thereof

A liquid crystal display (LCD) apparatus, comprising:

• an LCD panel, having a pixel region and a sensing region, and the LCD panel comprising a first substrate, a second substrate and a liquid crystal layer, the second substrate being disposed opposite to the first substrate, and the liquid crystal layer being disposed between the first substrate and the second substrate, a plurality of pixel structures being arranged in the pixel region in an array, and each of the pixel structures comprising a thin film transistor and a pixel electrode electrically connected to the thin film transistor, wherein the thin film transistor comprises a gate electrode, a gate insulator layer and an active layer;
• at least one photo-voltaic cell device being disposed on the sensing region of the first substrate, and the photo-voltaic cell device comprises:
• a doped semiconductor layer, wherein the active layer and the doped semiconductor layer of the photo-voltaic cell device are made in the same layer;
• a transparent electrode layer;
• a first type doped silicon-rich dielectric layer, doped with a first type ion;
• a second type doped silicon-rich dielectric layer, doped with a second type ion, wherein the first type doped silicon-rich dielectric layer and the second type doped silicon-rich dielectric layer are disposed between the doped semiconductor layer and the transparent electrode layer;
• and
• a backlight module, disposed at a side of the LCD panel, and located adjacent to the first substrate to provide a light source to the LCD panel.

A thin film transistor array substrate, comprising:

• a substrate, having a pixel region and a sensing region;
• a plurality of pixel structures, arranged in the pixel region of the substrate in an array, wherein each of the pixel structures comprises a thin film transistor and a pixel electrode electrically connected to the thin film transistor, and the thin film transistor comprises a gate electrode, a gate insulator layer and an active layer;
• at least one photo-voltaic cell device, disposed on the sensing region of the substrate, wherein the photo-voltaic cell device comprises:
• a doped semiconductor layer, wherein the active layer and the doped semiconductor layer of the photo-voltaic cell device are made in the same layer;
• a transparent electrode layer;
• a first type doped silicon-rich dielectric layer, doped with a first type ion;
• and
• a second type doped silicon-rich dielectric layer, doped with a second type ion, wherein the first type doped silicon-rich dielectric layer and the second type doped silicon-rich dielectric layer are disposed between the doped semiconductor layer and the transparent electrode layer.