Solid-state image sensor and camera having image sensor with planarized insulative film

A solid-state image sensor comprising:

• a plurality of pixels arranged in a pixel array area;
• a peripheral circuit arranged outside said pixel array area;
• a photoelectric converter arranged in said pixel array area;
• an amplification MOS transistor arranged in said pixel array area and having a gate electrode, said amplification MOS transistor outputting a signal according to charges generated by said photoelectric converter;
• a peripheral MOS transistor arranged in said peripheral circuit area and having a gate electrode, said peripheral MOS transistor having an LDD structure;
• a side wall arranged on a side surface of said gate electrode of said peripheral MOS transistor;
• an interlayer insulating film arranged to cover said photoelectric converter, said amplification MOS transistor and said peripheral MOS transistor, said interlayer insulating film being planarized by CMP;
• a first insulating film arranged between said interlayer insulating film and an upper surface of said gate electrode of said amplification MOS transistor and extending to cover said photoelectric converter and a side surface of said gate electrode of said amplification MOS transistor;
• and
• a second insulating film arranged between said interlayer insulating film and an upper surface of said gate electrode of said peripheral MOS transistor, a distance from the side surface of said gate electrode of said amplification MOS transistor to a portion of said first insulating film, said portion being nearest to said side surface of said gate electrode of said amplification MOS transistor, is smaller than a thickness of said side wall.