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US 8,553,115 B2Granted
Photoelectric conversion apparatus and imaging system using the same
AssigneeCanon Kabushiki Kaisha
InventorsYu Arishima, Takashi Matsuda, Toru Koizumi
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AssigneeCanon Kabushiki Kaisha
InventorsYu Arishima, Takashi Matsuda, Toru Koizumi
Estimating the term…
If separations between photoelectric conversion elements are different from each other, charge leaking into adjacent photoelectric conversion elements varies. A photoelectric conversion apparatus of the present invention includes a first semiconductor region that can be potential barriers against signal charge, between first and second photoelectric conversion elements. Further, the apparatus includes a second semiconductor region that has the same depth as the depth of the first semiconductor region and a width narrower than the width of the first semiconductor region and can be potential barriers against the signal charge, between the first and a third photoelectric conversion element. Moreover, the apparatus includes a third semiconductor region that can be potential barriers against the signal charge under the first semiconductor region and the second semiconductor region.
A photoelectric conversion apparatus comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Charge-coupled device [CCD] image sensors: having arrangements for blooming suppression
Noise processing, e.g. detecting, correcting, reducing or removing noise: detection or reduction of noise due to excess charges produced by the…
Constructional details of image sensors: pixel isolation structures
Solar cells and light sensors
About 5 years 5 months of term left · ends 5 Apr 2032 (estimated)
1. Field of the Invention
The present application relates to a structure of isolation of a photoelectric conversion apparatus.
2. Description of the Related Art
FIGS. 1A and 1B are schematic sectional views of a photoelectric conversion apparatus illustrating a first embodiment.
FIG. 2A is a circuit diagram and a planar layout diagram of the photoelectric conversion apparatus illustrating the first embodiment.
FIG. 2B is a planar layout diagram of the photoelectric conversion apparatus illustrating the first embodiment.
Preferred embodiments of the present invention will now be described in detail in accordance with the accompanying drawings.
A photoelectric conversion apparatus of the present invention includes a first semiconductor region that can be potential barriers against signal charge arranged in a element isolation region between first and second photoelectric conversion elements. The photoelectric conversion apparatus also includes a second semiconductor region that can be potential barriers against signal charge arranged in an element isolation region between the first and a third photoelectric conversion element. The second semiconductor region has the same depth as the depth of the first semiconductor region and a width narrower than a width of the first semiconductor region. Further, the photoelectric conversion apparatus includes a third semiconductor region that can be potential barriers against signal charge under the first and second semiconductor regions. Such a configuration can suppress that the signal charge generated in the first photoelectric conversion element unevenly leaks into the adjacent second and third photoelectric conversion elements. That is, this configuration enables a cross-talk quantity to be made uniform, thereby improving image quality. Further, even when correction is made, image signals can easily be corrected. Accordingly, a necessary configuration of an image processor can also be made to be simple.
This embodiment will hereinafter be described in detail using drawings.