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US 8,552,812 B2Granted
Transformer with bypass capacitor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiao-Tsung Yen, Yu-Ling Lin, Ying-Ta Lu, Chin-Wei Kuo, Ho-Hsiang Chen
Life of this patent
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Abstract
An electronic device comprises first, second and third inductors connected in series and formed in a metal layer over a semiconductor substrate. The first and second inductors have a mutual inductance with each other. The second and third inductors having a mutual inductance with each other. A first capacitor has a first electrode connected to a first node. The first node is conductively coupled between the first and second inductors. A second capacitor has a second electrode connected to a second node. The second node is conductively coupled between the second and third inductors.
Claims18
An electronic device, comprising:
- a first winding formed in a first metal layer above a semiconductor substrate, the first winding having first and second segments;
- a second winding formed in the first metal layer, the first segment adjacent a first portion of the second winding, the second segment adjacent a second portion of the second winding, wherein one of the first and second segments has a connection to the second winding in the first metal layer, and the other of the first and second segments has a connection to the second winding at least partially in a second metal layer other than the first metal layer;
- a first capacitor having a first electrode connected to a first node, the first node being conductively coupled between the first segment and the second winding;
- and
- a second capacitor having a second electrode connected to a second node, the second node being conductively coupled between the second segment and the second winding.
2 more elements
An electronic device, comprising:
- a first winding formed in a first metal layer above a semiconductor substrate, the first winding having first and second segments;
- a second winding formed in the first metal layer, the first segment adjacent a first portion of the second winding, the second segment adjacent a second portion of the second winding, the second winding coupled between a first port of the device and a second port of the device;
- a first capacitor having a first electrode connected to a first node, the first node being conductively coupled between the first segment and the second winding;
- a second capacitor having a second electrode connected to a second node, the second node being conductively coupled between the second segment and the second winding;
- and
- a coil connecting a third node to a fourth node, wherein the third node is between the first capacitor and the first port, and the fourth node is between the second capacitor and the second port.
3 more elements
An electronic device, comprising:
- a first winding formed in a first metal layer above a semiconductor substrate, the first winding having first and second segments;
- a second winding formed in the first metal layer, the first segment adjacent a first portion of the second winding, the second segment adjacent a second portion of the second winding;
- a first capacitor having a first electrode connected to a first node, the first node being conductively coupled between the first segment and the second winding;
- and
- a second capacitor having a second electrode connected to a second node, the second node being conductively coupled between the second segment and the second winding, wherein the second winding has:
- a first center tap connecting the second winding to ground, and
- a second center tap connecting the second node to VDD.
4 more elements
An electronic device, comprising:
- first, second and third inductors connected in series and formed in a metal layer over a semiconductor substrate, the first and second inductors having a mutual inductance with each other, the second and third inductors having a mutual inductance with each other;
- a first capacitor having a first electrode connected to a first node, the first node being conductively coupled between the first and second inductors;
- and
- a second capacitor having a second electrode connected to a second node, the second node being conductively coupled between the second and third inductors.
1 more element
A method comprising:
- forming a first coil, a second coil and a third coil in a first metal layer above a semiconductor substrate, the first coil adjacent a first portion of the second coil, the third coil adjacent a second portion of the second coil;
- forming a first capacitor having a first electrode connected to a first node, the first node being conductively coupled between the first and second coils;
- forming a second capacitor having a second electrode connected to a second node, the second node being conductively coupled between the second and third coils, wherein the first and second capacitors are formed between the substrate and the first metal layer:
- forming at least one conductive line in at least a second metal layer between the substrate and the first metal layer;
- and
- forming a plurality of conductive vias to connect the first and second capacitors to the at least one conductive line.
3 more elements
Dependencies are inferred from the claim text.