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US 8,552,562 B2Granted
Profiled contact for semiconductor device
AssigneeSensor Electronic Technology, Inc.
InventorsGrigory Simin, Michael Shur, Remigijus Gaska
Life of this patent
Estimating the term…
Abstract
A profiled contact for a device, such as a high power semiconductor device is provided. The contact is profiled in both a direction substantially parallel to a surface of a semiconductor structure of the device and a direction substantially perpendicular to the surface of the semiconductor structure. The profiling can limit the peak electric field between two electrodes to approximately the same as the average electrical field between the electrodes, as well as limit the electric field perpendicular to the semiconductor structure both within and outside the semiconductor structure.
Claims20
A device comprising:
- a semiconductor structure;
- and
- a first contact located on a surface of the semiconductor structure, wherein the first contact comprises at least two contact corners having a substantially lateral direction with respect to a surface of the semiconductor structure and a substantially perpendicular direction with respect to the surface of the semiconductor structure, wherein the at least two contact corners have a lateral profiled shape along the substantially lateral direction and at least one edge having a perpendicular profiled shape along the substantially perpendicular direction, wherein the lateral profiled shape of each of the at least two contact corners provides a gradual transition between a first edge and a second edge forming the corresponding contact corner and the perpendicular profiled shape provides a non-planar transition from the surface of the semiconductor structure to a top surface of the first contact.
A method comprising:
- designing a semiconductor device using a computer system including at least one computing device, the designing including configuring a shape of a first contact located on a surface of a semiconductor structure of the device using the computer system, wherein the first contact comprises at least two contact corners having a substantially lateral direction with respect to a surface of the semiconductor structure and a substantially perpendicular direction with respect to the surface of the semiconductor structure, and wherein the configuring includes:
- defining a lateral profiled shape for the at least two contact corners of the first contact along the substantially lateral direction, wherein the lateral profiled shape of each of the at least two contact corners provides a gradual transition between a first edge and a second edge forming the corresponding contact corner;
- and
- defining a perpendicular profiled shape for the at least one edge of the first contact, wherein the perpendicular profiled shape provides a non-planar transition from the surface of the semiconductor structure to a top surface of the first contact.
1 more element
A system comprising:
- a computer system including at least one computing device, wherein the computer system is configured to implement a method comprising:
- designing a semiconductor device, the designing including configuring a shape of a first contact located on a surface of a semiconductor structure of the device, wherein the first contact comprises at least two contact corners having a substantially lateral direction with respect to a surface of the semiconductor structure and a substantially perpendicular direction with respect to the surface of the semiconductor structure, and wherein the configuring includes:
- defining a lateral profiled shape for the at least two contact corners of the first contact along the substantially lateral direction, wherein the lateral profiled shape of each of the at least two contact corners provides a gradual transition between a first edge and a second edge forming the corresponding contact corner;
- and
- defining a perpendicular profiled shape for the at least one edge of the first contact, wherein the perpendicular profiled shape provides a non-planar transition from the surface of the semiconductor structure to a top surface of the first contact.
2 more elements
Dependencies are inferred from the claim text.