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US 8,552,558 B2Granted
Conductive compositions and processes for use in the manufacture of semiconductor devices
AssigneeE. I. Du Pont de Nemours and Company
InventorsAlan Frederick Carroll, Kenneth Warren Hang, Brian J. Laughlin, Yueli Wang
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Abstract
The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (c) fluorine-containing glass frit; dispersed in (d) organic vehicle and devices made therefrom.
Claims8
A semiconductor device comprising:
- a semiconductor layer;
- an insulating layer over the semiconductor layer;
- a sintered electrode formed on the side of the insulating layer opposite to the semiconductor layer, the sintered electrode comprising silver, SiO2, Bi2O3, PbF2, penetrating the insulating layer;
- wherein the sintered electrode is formed from a thick film paste comprising:
- a) electrically conductive silver
- b) a glass frit composition comprising 4-26 wt % SiO2, 6-52 wt % Bi2O3 and 5-29 wt % PbF2, based on wt % of the total glass frit composition;
- dispersed in
- c) an organic vehicle;
- wherein the thick film paste penetrates the insulating layer upon sintering.
6 more elements
Dependencies are inferred from the claim text.