Manufacturing method for semiconductor device, semiconductor device and semiconductor chip

A semiconductor chip having a front surface and a rear surface, comprising:

• a semiconductor substrate;
• a functional element formed on the front surface side of this semiconductor substrate;
• a feedthrough electrode which is placed within a through hole that penetrates the semiconductor substrate in a direction of a thickness thereof and which is electrically connected to the functional element;
• a front surface side connection member which is electrically connected to the feedthrough electrode and which protrudes from the front surface;
• and
• a rear surface side connection member which is electrically connected to the feedthrough electrode and displaced therefrom in a direction parallel to the rear surface of the semiconductor chip, and which has a joining surface within a recess that is formed in the rear surface;
• and
• a rear surface protective film on the rear surface side, covering at least part of the rear surface side connection member, wherein the recess includes an opening in the rear surface protective film,
• wherein the rear surface side connection member includes a first portion exposed though the opening formed in the rear surface protective film to provide the joining surface, and a second portion which extends laterally along the rear surface side of the semiconductor surface and is connected to the feedthrough electrode, and which is covered by the rear surface protective film.

A semiconductor device, comprising:

• first and second semiconductor chips, each of which has a front surface and a rear surface, and is provided with
• a semiconductor substrate,
• a functional element formed on the front surface side of the semiconductor substrate, and
• a feedthrough electrode which is placed within a through hole that penetrates the semiconductor substrate in a direction of a thickness thereof and which is electrically connected to the functional element,
• wherein a width of the through hole is substantially constant throughout the respective semiconductor chip in the direction of thickness thereof;
• a connection member which is provided between a bottom of a recess that is formed in the rear surface of the first semiconductor chip and the front surface of the second semiconductor chip in a manner that a gap within the recess is formed at least partially between an inner wall surface of the recess and the connection member and which electrically connects the feedthrough electrode of the first semiconductor chip to the feedthrough electrode of the second semiconductor chip, the bottom of the recess located deeper in the first semiconductor chip than the rear surface of the first semiconductor chip in said direction of a thickness of the semiconductor substrate thereof,
• wherein the connection member includes an extended portion which extends along the rear surface side of the semiconductor substrate of the first semiconductor chip and is connected to the feedthrough electrode,
• a protective film on the rear surface side of the first semiconductor chip, covering the extended portion, wherein the recess includes an opening in the rear surface protective film,
• wherein the extended portion of the connection member extends laterally to the feedthrough electrode of the first semiconductor chip, which is covered by the protective film;
• and
• an external connection member of the semiconductor device, which is electrically connected to the first and second semiconductor chips.