Semiconductor device and method for fabricating the same

A semiconductor device, comprising:

• a plurality of silicon (Si) semiconductor parts arranged on a substrate, formed in a wire-shaped structure, and in which at least one element of sulfur (S), selenium (Se), and tellurium (Te) is present on a surface portion;
• and
• a plurality of dielectric films respectively formed as if to cover a corresponding Si semiconductor part of the plurality of Si semiconductor parts and in contact with a surface portion of the corresponding Si semiconductor part of the plurality of Si semiconductor parts to form an interface with the corresponding Si semiconductor part of the plurality of Si semiconductor parts,
• wherein the plurality of Si semiconductor parts is arranged in a vertical direction with respect to a substrate surface;
• and further comprising:
• a plurality of charge accumulation films respectively formed as if to cover a corresponding dielectric film of the plurality of dielectric films;
• a plurality of interelectrode dielectric films respectively formed as if to cover a corresponding charge accumulation film of the plurality of charge accumulation films;
• and
• a control electrode formed as if to cover the plurality of interelectrode dielectric films.