Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device comprising

• a step of forming a p-channel-type field-effect transistor in a first region of a semiconductor substrate and forming an n-channel-type field-effect transistor in a second region of the semiconductor substrate, wherein
• the step of forming the p-channel-type field-effect transistor and the n-channel-type field-effect transistor includes steps of:
• (a) forming a first insulating film on the semiconductor substrate;
• (b) forming a first metal film on the first insulating film;
• (c) oxidizing the first metal film of the first region to be converted into a first high-dielectric film from the first metal film of the first region;
• (d) mutually diffusing the first metal film and the first insulating film of the second region by first thermal treatment to be converted into a second high-dielectric film;
• (e) diffusing a first metal into the first high-dielectric film by forming a second insulating film made of first metal oxide so as to be in contact with the first high-dielectric film in the first region and performing second thermal treatment thereto;
• (f) diffusing a second metal into the second high-dielectric film by forming a third insulating film made of second metal oxide on the second high-dielectric film and performing third thermal treatment thereto;
• and
• (g) processing the first high-dielectric film and the first insulating film in the first region to form a first gate insulating film formed of the first insulating film and the first high-dielectric film, and processing the second high-dielectric film and the first insulating film in the second region to form a second gate insulating film formed of the first insulating film and the second high-dielectric film,
• in the step of (a), the first insulating film mainly made of silicon oxide or silicon oxynitride is formed,
• in the step of (b), the first metal film mainly made of hafnium is formed,
• in the step of (c), the first metal film of the first region is oxidized to be converted into the first high-dielectric film mainly made of hafnium and oxygen, and,
• in the step of (d), the first metal film and the first insulating film of the second region are mutually diffused to be converted into the second high-dielectric film mainly made of hafnium, silicon, and oxygen.