Structure and method to make replacement metal gate and contact metal

An electrical device comprising:

• an n-type semiconductor device comprising a first gate structure in a first device region of a semiconductor substrate that is between a first source region and a first drain region, wherein the first gate structure includes a gate dielectric that is present on the semiconductor substrate, a metal layer comprising titanium and aluminum, and a metal fill comprised of aluminum;
• a p-type semiconductor device comprising a second gate structure in a second device region of the semiconductor substrate that is between a second source region and a second drain region, wherein the second gate structure includes the gate dielectric that is present on the semiconductor substrate, a p-type work function metal layer, the metal layer comprising titanium and aluminum, and the metal fill comprised of aluminum;
• and
• an interlevel dielectric that is present over the semiconductor substrate, the interlevel dielectric comprising interconnects to the first source region, the first drain region, the second source region and the second drain region, wherein the interconnects are comprised of the metal layer comprising titanium and aluminum, and the metal fill comprised of aluminum.