Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a first conductive layer;
• a first insulator over the first conductive layer;
• a circuit portion including a thin film transistor, the circuit portion being over the first insulator;
• an antenna over the circuit portion, the antenna being electrically connected to the thin film transistor;
• a second insulator over the antenna;
• and
• a second conductive layer over the second insulator, the second conductive layer being conducted to the first conductive layer,
• wherein the first insulator and the second insulator are closely attached to be bonded to each other, and
• wherein each of the first conductive layer and the second conductive layer comprises one of titanium and a compound of silicon oxide and indium tin oxide.

A semiconductor device comprising:

• a first conductive layer;
• a first insulator over the first conductive layer;
• a circuit portion including a thin film transistor, the circuit portion being over the first insulator;
• a first insulating film over the circuit portion;
• a second insulating film over the first insulating film;
• an antenna over the circuit portion with the first insulating film and the second insulating film interposed therebetween, the antenna being electrically connected to the thin film transistor;
• a third insulating film over the antenna;
• a second insulator over the third insulating film;
• and
• a second conductive layer over the second insulator, the second conductive layer being conducted to the first conductive layer,
• wherein the first insulating film and the third insulating film are directly in contact with each other in an outer side of the second insulating film and the first insulator and the second insulator are closely attached to be bonded to each other, and
• wherein each of the first conductive layer and the second conductive layer comprises one of titanium and a compound of silicon oxide and indium tin oxide.

A method for manufacturing a semiconductor device, comprising:

• forming a circuit portion including a thin film transistor;
• forming a first insulating film over the circuit portion and in a peripheral region of the circuit portion;
• forming a second insulating film over the first insulating film;
• forming an antenna over the circuit portion with the first insulating film and the second insulating film interposed therebetween, the antenna being electrically connected to the thin film transistor;
• forming a third insulating film over the first insulating film and the antenna, the third insulating film being directly in contact with the first insulating film in a region of an outer side of the second insulating film in the peripheral region;
• forming a first conductive layer over the third insulating film;
• and
• forming a second conductive layer under the circuit portion,
• wherein each of the first conductive layer and the second conductive layer is formed of one of titanium and a compound of silicon oxide and indium tin oxide.

A method for manufacturing a semiconductor device, comprising:

• forming a circuit portion including a thin film transistor;
• forming an antenna over the circuit portion, the antenna being electrically connected to the thin film transistor;
• placing a first insulator over the antenna;
• forming a first conductive layer over the first insulator;
• placing a second insulator under the circuit portion;
• and
• forming a second conductive layer under the second insulator,
• wherein in a peripheral region of the circuit portion, the first insulator, the first conductive layer, the second insulator, and the second conductive layer are cut and the first conductive layer and the second conductive layer are melted, whereby the first conductive layer and the second conductive layer are conducted with each other at a side surface of the peripheral region,
• wherein each of the first conductive layer and the second conductive layer is formed of one of titanium and a compound of silicon oxide and indium tin oxide.

A method for manufacturing a semiconductor device, comprising:

• forming a circuit portion including a thin film transistor;
• forming a first insulating film over the circuit portion and in a peripheral region of the circuit portion;
• forming a second insulating film over the first insulating film;
• forming an antenna over the circuit portion with the first insulating film and the second insulating film interposed therebetween, the antenna being electrically connected to the thin film transistor;
• forming a third insulating film over the first insulating film and the antenna, the third insulating film being directly in contact with the first insulating film in a region of an outer side of the second insulating film in the peripheral region;
• placing a first insulator over the second insulating film;
• forming a first conductive layer over the first insulator;
• removing parts of the first insulating film and the third insulating film in the peripheral region;
• placing a second insulator under the circuit portion, the second insulator being closely attached to and bonded to the first insulator in a region in which parts of the first insulating film and the third insulating film are removed of the peripheral region;
• and
• forming a second conductive layer under the second insulator,
• wherein in the peripheral region of the circuit portion, the first insulator, the first conductive layer, the second insulator, and the second conductive layer are cut and the first conductive layer and the second conductive layer are melted, whereby the first conductive layer and the second conductive layer are conducted with each other at a side surface of the peripheral region,
• wherein each of the first conductive layer and the second conductive layer is formed of one of titanium and a compound of silicon oxide and indium tin oxide.