Semiconductor device
AssigneeMagnaChip Semiconductor, Ltd.
InventorsJae-Han Cha, Kyung-Ho Lee, Sun-Goo Kim, Hyung-Suk Choi, Ju-Ho Kim, Jin-Young Chae, In-Taek Oh
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Abstract
The semiconductor device includes: a first conductive-type first well and a second conductive-type second well configured over a substrate to contact each other; a second conductive-type anti-diffusion region configured in an interface where the first conductive-type first well contacts the second conductive-type second well over the substrate; and a gate electrode configured to simultaneously cross the first conductive-type first well, the second conductive-type anti-diffusion region, and the second conductive-type second well over the substrate.
Claims5
A semiconductor device, comprising:
- a second conductive-type deep well configured over a substrate;
- a first conductive-type well configured over the second conductive-type deep well;
- a second conductive-type anti-diffusion region configured in the second conductive-type deep well to contact a sidewall of the first conductive-type well;
- a gate electrode configured to simultaneously cross the first conductive-type well, the second conductive-type anti-diffusion region, and the second conductive-type deep well over the substrate and
- wherein the first conductive type is different from the second conductive type.
Dependencies are inferred from the claim text.