Semiconductor devices semiconductor pillars and method of fabricating the same

A semiconductor device comprising:

• a substrate;
• a trench isolation region on the substrate that defines first and second spaced-apart active regions;
• a first semiconductor pillar protruding upward from the first active region;
• a second semiconductor pillar protruding upward from the second active region;
• a first gate mask extending to cross over the first and second active regions, the first gate mask surrounding upper portions of sidewalls of the first and second semiconductor pillars;
• a first gate line below the first gate mask, the first gate line being spaced-apart from the first and second active regions, the first gate line surrounding parts of the sidewalls of the first and second semiconductor pillars;
• a first conductive pattern formed on an upper sidewall of the first active region;
• and
• a second conductive pattern formed on an upper sidewall of the second active region.

A semiconductor device comprising:

• a substrate;
• a trench isolation region on the substrate that defines first and second spaced-apart active regions;
• a first semiconductor pillar protruding upward from the first active region;
• a second semiconductor pillar protruding upward from the second active region;
• a first gate mask extending to cross over the first and second active regions, the first gate mask surrounding upper portions of sidewalls of the first and second semiconductor pillars;
• a first gate line below the first gate mask, the first gate line being spaced-apart from the first and second active regions, the first gate line surrounding parts of the sidewalls of the first and second semiconductor pillars;
• and
• a gap fill insulating layer provided at both sides of the first gate line and between the upper regions of the first and second active regions, wherein the portion extending between the upper regions of the first and second active regions constitutes a part of the trench isolation region.