Nonvolatile memory devices having gate structures doped by nitrogen
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Hyun Lee, Dong-Gun Park
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Abstract
Nonvolatile memory devices are provided including an integrated circuit substrate and a charge storage pattern on the integrated circuit substrate. The charge storage pattern has a sidewall and a tunnel insulating layer is provided between the charge storage pattern and the integrated circuit substrate. A gate pattern is provided on the charge storage pattern. A blocking insulating layer is provided between the charge storage pattern and the gate pattern. The sidewall of the charge storage pattern includes a first nitrogen doped layer. Related methods of fabricating nonvolatile memory devices are also provided herein.
Claims9
A nonvolatile memory device comprising:
- an active region;
- a charge storage pattern on the active region;
- a tunnel insulating layer between the charge storage pattern and the active region;
- a gate pattern on the charge storage pattern;
- and
- a blocking insulating layer between the charge storage pattern and the gate pattern, the blocking insulating layer having a sidewall,
- wherein the sidewall of the blocking insulating layer includes a first nitrogen doped layer, and wherein the first nitrogen doped layer extends on a sidewall of the gate pattern.
Dependencies are inferred from the claim text.