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US 8,552,486 B2Granted
Forming metal-insulator-metal capacitors over a top metal layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKun-Mao Wu, Chih-Hsun Lin, Yu-Lung Yeh, Kuan-Chi Tsai
Life of this patent
Estimating the term…
Abstract
A plurality of metal layers includes a top metal layer. An Ultra-Thick Metal (UTM) layer is disposed over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer. A Metal-Insulator-Metal (MIM) capacitor is disposed under the UTM layer and over the top metal layer.
Claims20
A device comprising:
- a plurality of metal layers comprising a top metal layer;
- an Ultra-Thick Metal (UTM) layer over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer;
- a dielectric layer under the UTM layer and over the top metal layer;
- and
- a Metal-Insulator-Metal (MIM) capacitor in the dielectric layer, wherein the dielectric layer comprises:
- a planar first portion having a top surface level with a top surface of the MIM capacitor;
- and
- a second portion over and vertically overlapping the MIM capacitor.
5 more elements
A device comprising:
- a plurality of metal layers comprising a top metal layer;
- an Ultra-Thick Metal (UTM) layer over the top metal layer, wherein a ratio of a first thickness of the UTM layer to a second thickness of the top metal layer is greater than about 3;
- a via-dielectric layer over the top metal layer and under the UTM layer;
- a Metal-Insulator-Metal (MIM) capacitor under the UTM layer and over the top metal layer, wherein the via-dielectric layer comprises a planar first portion having a top surface level with a top surface of the MIM capacitor, and a second portion extending over and vertically overlapping the MIM capacitor;
- a via in the via-dielectric layer and contacting a first metal line in the UTM layer and a second metal line in the top metal layer;
- and
- a capacitor contact plug in the via-dielectric layer and electrically connected to the MIM capacitor.
4 more elements
A device comprising:
- a plurality of metal layers comprising a top metal layer;
- a first etch stop layer over the top metal layer;
- a Metal-Insulator-Metal (MIM) capacitor over the first etch stop layer;
- a via-dielectric layer comprises a planar first portion having a top surface level with a top surface of the MIM capacitor, and a second portion over and vertically overlapping the MIM capacitor;
- a via and a contact plug in the via-dielectric layer and electrically connected to a metal line in the top metal layer and the MIM capacitor, respectively;
- a second etch stop layer over the via-dielectric layer;
- an Ultra-Thick Metal (UTM) dielectric layer over the second etch stop layer;
- and
- a first and a second UTM metal line in the UTM dielectric layer and electrically connected to the via and the contact plug, respectively.
6 more elements
Dependencies are inferred from the claim text.