Semiconductor structure having metal-insulator-metal capacitor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun Hua Chang, Sung-Hui Huang, Der-Chyang Yeh
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Abstract
A semiconductor structure includes a through-substrate-via (TSV) structure disposed in a substrate. A first etch stop layer is disposed over the TSV structure. A first dielectric layer is disposed in contact with the first etch stop layer. A first conductive structure is disposed through the first etch stop layer and the first dielectric layer. The first conductive structure is electrically coupled with the TSV structure. The TSV structure is substantially wider than the first conductive structure. A second etch stop layer is disposed in contact with the first dielectric layer. A metal-insulator-metal (MIM) capacitor structure is disposed in contact with the second etch stop layer.
Claims8
A semiconductor structure comprising:
- a through-substrate-via (TSV) structure disposed in a substrate;
- a first etch stop layer disposed over the TSV structure;
- a first dielectric layer disposed in contact with the first etch stop layer;
- a first conductive structure disposed through the first etch stop layer and the first dielectric layer, the first conductive structure being electrically coupled with the TSV structure, wherein the TSV structure is substantially wider than the first conductive structure;
- a second etch stop layer disposed in contact with the first dielectric layer;
- and
- a metal-insulator-metal (MIM) capacitor structure disposed in contact with the second etch stop layer.
Dependencies are inferred from the claim text.