Semiconductor device and method for fabricating the same

A semiconductor device comprising:

• a ferroelectric capacitor formed above a semiconductor substrate and including a lower electrode, a ferroelectric film formed on the lower electrode and an upper electrode formed on the ferroelectric film;
• a first insulation film formed above the semiconductor substrate and the ferroelectric capacitor, and having a surface planarized;
• a fifth insulation film formed above the first insulation film and having a flat surface;
• a flat first, barrier film formed above the overall flat surface of the fifth insulation film, for preventing the diffusion of hydrogen or water;
• a sixth insulation film formed above the first barrier film and having a flat surface;
• a second insulation film formed above the sixth insulation film and having a surface planarized;
• a seventh insulation film formed above the second insulation film and having a flat surface;
• a flat second barrier film formed above the seventh insulation film, for preventing the diffusion of hydrogen or water;
• an eighth insulation film formed above the second barrier film and having a flat surface;
• a first interconnection electrically connected to the lower electrode of the ferroelectric capacitor, covered by the fifth insulation film;
• a second interconnection formed above the first interconnection;
• and
• a third interconnection formed above the second interconnection and electrically connected to an outside circuit,
• wherein the first insulation film, the fifth insulation film, the sixth insulation film and the first barrier film are formed between the first interconnection and the second interconnection,
• wherein the second insulation film, the seventh insulation film, the eighth, insulation film and the second barrier film are formed above the third interconnection, and an opening is formed in the second insulation film, the seventh insulation film, the eighth insulation film and the second barrier film down to the third interconnection.

A semiconductor device comprising:

• a ferroelectric capacitor formed above a semiconductor substrate, and including a lower electrode, a ferroelectric film formed on the lower electrode and an upper electrode formed on the ferroelectric film;
• a first insulation film formed above the semiconductor substrate and the ferroelectric capacitor, and having a surface planarized;
• a fifth insulation film formed above the first insulation film and having a flat surface;
• a flat first barrier film formed above the overall flat surface of the fifth insulation film, for preventing the diffusion of hydrogen or water;
• a sixth insulation film formed above the first barrier film and having a flat surface;
• a second insulation film formed above the sixth insulation film and having a surface planarized;
• a seventh insulation film formed above the second insulation film and having a flat surface;
• a flat second barrier film formed above the seventh insulation film, for preventing the diffusion of hydrogen or water;
• an eighth insulation film formed above the second barrier film, and having a flat surface;
• a first interconnection electrically connected to the lower electrode of the ferroelectric capacitor, covered by the fifth insulation film;
• a second interconnection formed above the first interconnection;
• and
• a third interconnection formed, above the second interconnection and electrically connected to an outside circuit,
• wherein the first insulation film, the fifth insulation film, the sixth insulation film and the first barrier film are formed between the second interconnection and the third interconnection, the second insulation film, the seventh insulation film, the eighth insulation film and the second barrier film are formed above the third interconnection, and an opening is formed in the second insulation film, the seventh insulation film, the eighth insulation film and the second barrier film down to the third interconnection.

A semiconductor device comprising:

• a ferroelectric capacitor formed above a semiconductor substrate and including a lower electrode, a ferroelectric film formed on the lower electrode and an upper electrode formed on, the ferroelectric film;
• a first insulation film formed above the semiconductor substrate and the ferroelectric capacitor, and having a surface planarized;
• a fifth insulation film formed above the first insulation film and having a flat surface;
• a flat first barrier film formed above the overall flat surface of the fifth insulation film, for preventing the diffusion of hydrogen or water;
• a sixth insulation film formed above the first barrier film and having a flat surface;
• a second insulation film formed above the sixth insulation, film, and having a surface planarized;
• a seventh insulation film formed above the second insulation film and having a flat surface;
• a flat second barrier film formed above the seventh insulation film, for preventing the diffusion of hydrogen or water;
• an eighth insulation film, formed above the second barrier film and having a flat surface;
• a first interconnection electrically connected to the lower electrode of the ferroelectric capacitor, covered by the fifth insulation film;
• a second interconnection formed above the first interconnection;
• and
• a third interconnection formed above the second interconnection and electrically connected to an outside circuit,
• wherein the second insulation film, the seventh insulation film, the eighth insulation film and the second barrier film are formed between the first interconnection and the second interconnection.

A semiconductor device comprising:

• a ferroelectric capacitor formed above a semiconductor substrate, and including a lower electrode, a ferroelectric film formed on the lower electrode and an upper electrode formed on, the ferroelectric film;
• a first insulation film formed above the semiconductor substrate and the ferroelectric capacitor, and having a surface planarized;
• a fifth insulation film formed above the first insulation film and having a flat surface;
• a flat first barrier film formed above the overall flat surface of the fifth insulation film, for preventing the diffusion of hydrogen or water;
• a sixth insulation film formed above the first barrier film and having a flat surface;
• a second insulation film formed above the sixth insulation film and having a surface planarized;
• a seventh insulation film formed above the second insulation film and having a flat surface;
• a flat second barrier film formed above the seventh insulation film, for preventing the diffusion of hydrogen or water;
• an eighth insulation film formed above the second barrier film and having a flat surface;
• a first interconnection electrically connected to the lower electrode of the ferroelectric capacitor, covered by the fifth insulation film;
• a second interconnection formed above the first interconnection;
• and
• a third interconnection formed, above the second interconnection and electrically connected to an outside circuit,
• wherein the second insulation film, the seventh insulation film, the eighth insulation film and the second barrier film are formed above the third interconnection, and an opening is formed in the second insulation film, the seventh insulation film, the eighth insulation film and the second barrier film down to the third interconnection.