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US 8,552,483 B2Granted
X-Y address type solid state image pickup device and method of producing the same
AssigneeSony Corporation
InventorsRyoji Suzuki, Keiji Mabuchi, Tomonori Mori
Life of this patent
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Abstract
In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
Claims17
An imaging device comprising:
- a well region of a first conductivity type within a semiconductor layer, said well region being between a first surface of the semiconductor layer and a light-receiving surface of the semiconductor layer;
- a first layer of the first conductivity type within said semiconductor layer, said first surface being between an interlayer insulating film and said first layer;
- a photo-electric conversion region of a second conductivity type within said semiconductor layer, said photo-electric conversion region being between said first layer and said light-receiving surface;
- an isolation region of the first conductivity type within said semiconductor layer, said isolation region being between said first surface and said light-receiving surface;
- a back side layer of the first conductivity type at said light-receiving surface, said back side layer extending into said semiconductor layer,
- wherein said back side layer is in physical contact with said isolation region, said well region being physical contact with said first layer and said photo-electric conversion region.
3 more elements
Dependencies are inferred from the claim text.